Auger Recombination in GaAs from First Principles
نویسندگان
چکیده
Auger recombination is a significant loss mechanism in many optoelectronic devices. We use first-principles methods based on density functional theory to study the relative importance of direct and indirect phonon-assisted Auger recombination in GaAs and related alloys. Energy and momentum of the recombining electron−hole pair can be transferred to an Auger electron (eeh process) or an Auger hole (hhe process). For eeh processes, the direct process is negligibly small compared to the phonon-assisted indirect process in GaAs, while in hhe processes the direct and phonon-assisted processes contribute almost equally. The hole processes are about 5 times stronger than the electron processes. In alloys with lower band gaps, the eeh processes become stronger, and below a band gap of 0.8 eV they are as relevant as the hole processes. Our results highlight the importance of indirect processes, even at low band gaps.
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